InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz F/sub max/

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929011

S. Krishnan, M. Dahlstrom, T. Mathew, Y. Wei, D. Scott, M. Urteaga, M. Rodwell, W.K. Liu, D. Lubyshev, X. Fang, Y. Wu

引用次数: 5

Abstract

We report InP/InGaAs/InP Double Heterojunction Transistors (DHBTs) with high breakdown voltages in a substrate transfer process. A device with a 400 /spl Aring/ thick graded base, a 500 /spl Aring/ chirped superlattice base-collector grade and a 2500 /spl Aring/ thick InP collector exhibits f/sub /spl tau//=165 GHz and f/sub max/=300 GHz with breakdown voltage BV/sub CEO/=6 V at a current density, J/sub e/=1/spl middot/10/sup 5/ A/cm/sup 2/. A device with a 400 /spl Aring/ thick graded base, a 500 /spl Aring/ chirped superlattice base-collector grade and a 1500 /spl Aring/ thick InP collector exhibits f/sub /spl tau//=215 GHz and f/sub max/=210 GHz with breakdown voltage BV/sub CEO/=4 V at a current density, J/sub e/=1/spl middot/10/sup 5/ A/cm/sup 2/.

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InP/InGaAs/InP双异质结双极晶体管，F/sub max/ 300 GHz

我们报道了在衬底转移过程中具有高击穿电压的InP/InGaAs/InP双异质结晶体管(dhbt)。具有400 /spl阿林/厚梯度基、500 /spl阿林/啁啾超晶格基集电极级和2500 /spl阿林/厚InP集电极的器件，在电流密度下，击穿电压BV/sub CEO/=6 V, J/sub e/=1/spl middot/10/sup 5/ A/cm/sup 2/， f/sub /spl tau//=165 GHz和f/sub max/=300 GHz。当电流密度为J/sub / e/=1/spl middot/10/sup 5/ A/cm/sup 2/时，具有400 /spl Aring/厚梯度基、500 /spl啁啾超晶格基集电极级和1500 /spl Aring/厚InP集电极的器件表现为f/sub /spl tau//=215 GHz和f/sub max/ /=210 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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