整合互补的NPN和PNP InAlAs/InGaAs HBTs

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929188

D. Cui, D. Pavlidis, D. Sawdai, P. Chin, T. Block

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引用次数: 2

摘要

在这项工作中，MBE使用再生方法演示了NPN和PNP InAlAs/InGaAs互补hbt的单片集成。与类似的分立器件相比，集成的hbt几乎没有退化。综合NPN和PNP HBTs的直流增益均为35。NPN器件实现了79.6 GHz的f/sub T/和109 GHz的f/sub max/， PNP器件实现了11.6 GHz的f/sub T/和22.6 GHz的f/sub max/。

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Integration of complementary NPN and PNP InAlAs/InGaAs HBTs

In this work, monolithic integration of NPN and PNP InAlAs/InGaAs complementary HBTs was demonstrated using a regrowth approach by MBE. The integrated HBTs showed little degradation over similar discrete devices. The DC gain was 35 for both integrated NPN and PNP HBTs. f/sub T/ of 79.6 GHz and f/sub max/ of 109 GHz were achieved for NPN devices while f/sub T/ of 11.6 GHz and f/sub max/ of 22.6 GHz were achieved for PNP devices.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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