{"title":"超快电吸收调制器集成DFB激光器","authors":"H. Takeuchi","doi":"10.1109/ICIPRM.2001.929151","DOIUrl":null,"url":null,"abstract":"We have developed two types of high-speed electroabsorption modulator integrated DFB lasers operating at 40 gbit/s and higher. A small modulator length of 90 /spl mu/m with a lumped-electrode results in the 40-Gbit/s operation. A traveling-wave electrode electroabsorption modulator integrated DFB laser achieves a bandwidth much higher than 50 GHz.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Ultra-fast electroabsorption modulator integrated DFB lasers\",\"authors\":\"H. Takeuchi\",\"doi\":\"10.1109/ICIPRM.2001.929151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed two types of high-speed electroabsorption modulator integrated DFB lasers operating at 40 gbit/s and higher. A small modulator length of 90 /spl mu/m with a lumped-electrode results in the 40-Gbit/s operation. A traveling-wave electrode electroabsorption modulator integrated DFB laser achieves a bandwidth much higher than 50 GHz.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have developed two types of high-speed electroabsorption modulator integrated DFB lasers operating at 40 gbit/s and higher. A small modulator length of 90 /spl mu/m with a lumped-electrode results in the 40-Gbit/s operation. A traveling-wave electrode electroabsorption modulator integrated DFB laser achieves a bandwidth much higher than 50 GHz.