化学束外延形成GaInNAs/GaAs密集堆积量子点

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929026

S. Makino, T. Miyamoto, T. Kageyama, Y. Ikenaga, F. Koyama, K. Iga

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引用次数: 0

摘要

GaInNAs/GaAs量子点系统有望延长GaAs基激光器的发射波长。我们成功地利用化学束外延(CBE)形成了GaInNAs量子点。GaInNAs量子点的大小和密度对生长温度的依赖性与GaInAs量子点有很大的不同。结果表明，随着生长温度从500/spl°C增加到540/spl°C, GaInAs量子点的尺寸增大，密度减小。另一方面，GaInNAs量子点的大小和密度变化较小。在540/spl度/C下，GaInNAs量子点的密度约为9/spl倍/10/sup 10/ cm/sup -2/，是GaInAs量子点的3倍。因此，在量子点中引入氮提供了一种新的点大小和密度控制技术。

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Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy

The GaInNAs/GaAs quantum dot (QD) system is expected to extend the emission wavelength of GaAs-based lasers. We successfully formed GaInNAs QDs by chemical beam epitaxy (CBE). The growth temperature dependence of the size and density of GaInNAs QDs was quite different from GaInAs QDs. It was found that the size of GaInAs QDs increased and density decreased with increasing growth temperature from 500/spl deg/C to 540/spl deg/C. On the other hand, GaInNAs QDs showed a small change of size and density. A density of about 9/spl times/10/sup 10/ cm/sup -2/ was obtained for GaInNAs QDs at 540/spl deg/C which is three times larger than that of GaInAs QDs. Thus, nitrogen introduction into the QDs provides a novel control technique of dot size and density.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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