Micro-Raman analysis of molar fraction in polycrystalline In/sub x/Ga/sub 1-x/ for traveling liquidus zone growth method

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929046

M.R. Islam, P. Verma, M. Yamada, M. Tatsumi, K. Kinoshita

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引用次数: 1

Abstract

In/sub x/Ga/sub 1-x/As is a tunable lattice matched bulk substrate material for fabricating InGaAs-based optoelectronic devices. Spatial homogeneity in molar fraction for such substrates is essential. It is planned to grow compositionally homogeneous In/sub x/Ga/sub 1-x/As bulk substrate using In/sub x/Ga/sub 1-x/As polycrystals with graded molar fraction profile as the starting material in the traveling liquidus zone growth method. To analyze these starting materials, particularly the molar fraction, non-destructive techniques are essential. In this paper, we report some results on micro-Raman studies in these polycrystalline starting materials with various values of molar fraction, and a polycrystalline In/sub x/Ga/sub 1-x/As cylindrical sample with graded molar fraction profile. Estimated molar fraction using Raman scattering for various polycrystalline samples show good agreements with those examined by chemical analysis. We further report the effect of surface condition on our results, using micro-Raman technique.

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多晶in /sub -x/ Ga/sub - 1-x中摩尔分数的微拉曼分析

In/sub x/Ga/sub 1-x/As是一种可调谐的晶格匹配体衬底材料，用于制造基于ingaas的光电器件。这种基质的摩尔分数的空间均匀性是必不可少的。计划以梯度摩尔分数分布的In/sub x/Ga/sub 1-x/As多晶为起始材料，采用行液相区生长法生长组成均匀的In/sub x/Ga/sub 1-x/As块状衬底。为了分析这些起始材料，特别是摩尔分数，非破坏性技术是必不可少的。本文报道了不同摩尔分数的多晶起始材料的微拉曼研究结果，以及具有梯度摩尔分数分布的In/sub x/Ga/sub 1-x/As多晶圆柱形样品。用拉曼散射法对各种多晶样品估计的摩尔分数与化学分析结果一致。我们使用微拉曼技术进一步报告了表面条件对我们结果的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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