R. Atsuchi, M. Takeyama, A. Noya, T. Hashizume, H. Hasegawa
{"title":"Formation and characterization of Al/sub x/Mo/sub 1-x//n-InP alloy electrode system for realization of thermally stable ohmic contacts","authors":"R. Atsuchi, M. Takeyama, A. Noya, T. Hashizume, H. Hasegawa","doi":"10.1109/ICIPRM.2001.929108","DOIUrl":null,"url":null,"abstract":"A novel metallization scheme of Al/sub 0.9/Mo/sub 0.1//n-InP is demonstrated to serve as a thermally stable ohmic contact. Ohmic behavior was obtained in the as-deposited contact, and the linear I-V characteristic was maintained after annealing at 500/spl deg/C for 20 s. It was found that the ohmic behavior was related to the diffusion of Al with Mo into the InP substrate, forming Al-Mo-P compounds at the interface. The initially formed interfacial products scarcely change upon annealing, which is considered to be the main reason for the stable electrical properties in the Al/sub 0.9/Mo/sub 0.1//InP contact.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel metallization scheme of Al/sub 0.9/Mo/sub 0.1//n-InP is demonstrated to serve as a thermally stable ohmic contact. Ohmic behavior was obtained in the as-deposited contact, and the linear I-V characteristic was maintained after annealing at 500/spl deg/C for 20 s. It was found that the ohmic behavior was related to the diffusion of Al with Mo into the InP substrate, forming Al-Mo-P compounds at the interface. The initially formed interfacial products scarcely change upon annealing, which is considered to be the main reason for the stable electrical properties in the Al/sub 0.9/Mo/sub 0.1//InP contact.