GaInNP: a novel material for electronic and optoelectronic applications

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929221

C. Tu, Y. G. Hong, R. André, H. Xin

引用次数: 2

Abstract

Adding /spl sim/0.5% N to GaInP grown on GaAs results in near zero conduction band discontinuity, and, thus, GaInNP could be an ideal material for HBTs. Adding also /spl sim/0.5% N to GaP results in direct bandgap, and GaNP/GaP light-emitting diodes are demonstrated.

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GaInNP:一种用于电子和光电子应用的新型材料

在GaAs上生长的GaInP中添加/spl sim/0.5% N，导致导带不连续接近于零，因此，GaInNP可能是HBTs的理想材料。在GaP中加入/spl sim/0.5% N可产生直接带隙，并演示了GaNP/GaP发光二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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