Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

Abstract

We fabricate an electro-absorption modulator for optical network system using a new strategy. The improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (>40 dB) and low capacitance (C<0.6 pF) which can achieve an ultra-high frequency (>10 GHz). The device is be used in 10 Gbps optical time division multiplex (OTDM) system as a signal generator.