Formation and characterization of Al/sub x/Mo/sub 1-x//n-InP alloy electrode system for realization of thermally stable ohmic contacts

A novel metallization scheme of Al/sub 0.9/Mo/sub 0.1//n-InP is demonstrated to serve as a thermally stable ohmic contact. Ohmic behavior was obtained in the as-deposited contact, and the linear I-V characteristic was maintained after annealing at 500/spl deg/C for 20 s. It was found that the ohmic behavior was related to the diffusion of Al with Mo into the InP substrate, forming Al-Mo-P compounds at the interface. The initially formed interfacial products scarcely change upon annealing, which is considered to be the main reason for the stable electrical properties in the Al/sub 0.9/Mo/sub 0.1//InP contact.