选择性面积流量调制外延形成的InP纳米锥体上InAs量子点的液滴异质外延

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929144

R. Oga, S. Yamamoto, I. Ohzawa, Y. Fujiwara, Y. Takeda

{"title":"选择性面积流量调制外延形成的InP纳米锥体上InAs量子点的液滴异质外延","authors":"R. Oga, S. Yamamoto, I. Ohzawa, Y. Fujiwara, Y. Takeda","doi":"10.1109/ICIPRM.2001.929144","DOIUrl":null,"url":null,"abstract":"We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy\",\"authors\":\"R. Oga, S. Yamamoto, I. Ohzawa, Y. Fujiwara, Y. Takeda\",\"doi\":\"10.1109/ICIPRM.2001.929144\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929144\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用液滴异质外延的方法在InP纳米金字塔上生长了InAs量子结构，并对其发光特性进行了研究。采用选择性面积流量调制外延技术(FME)成功地形成了具有更好尺寸控制的纳米锥体。在4.2 K下的光致发光(PL)测量中，可以清楚地观察到InAs量子结构引起的特征发光，这与InAs生长所需的TMIn供应时间有轻微的关系。我们还比较了不同图案区域样品的发光情况。

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Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy

We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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