具有高消光比和低电容的应变MQW电吸收调制器

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929060

Y. Sun, W. Wang, W. Chen, G.L. Liu, F. Zhou, H. Zhu

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引用次数: 0

摘要

我们采用一种新的策略制作了一种用于光网络系统的电吸收调制器。结果表明，应变InGaAs/InAlAs MQW具有极化无关、高消光比(>40 dB)和低电容(C10 GHz)的调制特性。该器件可用于10gbps光时分复用(OTDM)系统中作为信号发生器。

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Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy. The improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (>40 dB) and low capacitance (C<0.6 pF) which can achieve an ultra-high frequency (>10 GHz). The device is be used in 10 Gbps optical time division multiplex (OTDM) system as a signal generator.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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