Multi quantum well (MQW) lasers at 1550 nm fabricated with a single epitaxial selective growth step by MOVPE without waveguide etching

Abstract

MQW lasers have been fabricated by means of a single selective epitaxial growth and without waveguide etching. Flat layer interfaces have been obtained for a wide range of mask widths and mask openings while retaining material quality and providing wide bandgap tuning range through the use of QW's. Initial results show good laser performance at 1550 nm demonstrating the feasibility of the easy fabrication method for the realisation of more complex devices by means of active-passive integration.