Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices

Abstract

Thin pseudomorphic InAs/sub 0.25/P/sub 0.75/ layers were grown by metal organic vapor phase epitaxy (MOVPE) onto InP and subsequently successfully transferred to InP and Ge host substrates through direct bonding. Through in plane angular misalignment InAs/sub y/P/sub 1-y/ twist bonded compliant substrates were fabricated and were analyzed using XRD, revealing important differences between using different host substrates. Lattice-mismatched In/sub 1-x/Ga/sub x/As layers were grown onto these InAsP twist bonded compliant substrates by MOVPE. They were analyzed using photoluminescence (PL) and x-ray diffraction (XRD), and compared to deposition onto InP substrates. The results indicate that the InAsP TB compliant substrates can be used for the realization of low-defect density lattice-mismatched InP-based devices.