Al/sub 0.5/In/sub 0.5/P/InGaAs掺杂沟道hfet具有较高的功率密度和功率增益效率

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929089

H. Chiu, S.C. Yang, Y. Chan, J. Kuo

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引用次数: 0

摘要

Al/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As掺杂沟道hfet (dcfet)由于改进了更大的/spl δ /E/sub c/ (0.45 eV)和宽带隙AlInP肖特基层，在微波功率器件应用中具有高击穿电压、高功率密度和高线性度。该器件偏置电压为V/sub /=3.0 V，工作频率为2.4 GHz，输出功率密度为209 mW/mm，功率增加效率为59%，线性功率增益为17 dB。双音调测量表明，在输入功率为0 dBm时，三阶互调为-29 dBc，输出截距点(OIP/sub 3/)为30.4 dBm。

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High power density and power added efficiency of Al/sub 0.5/In/sub 0.5/P/InGaAs doped-channel HFETs

Al/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As doped-channel HFETs (DCFETs) demonstrate a high breakdown voltage, a high power density, and a high linearity for microwave power device applications due to the improvement of a larger /spl Delta/E/sub c/ (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at V/sub ds/=3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that the 3rd-order inter-modulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP/sub 3/) is 30.4 dBm for devices with a 1 mm-wide gate.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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