{"title":"High power density and power added efficiency of Al/sub 0.5/In/sub 0.5/P/InGaAs doped-channel HFETs","authors":"H. Chiu, S.C. Yang, Y. Chan, J. Kuo","doi":"10.1109/ICIPRM.2001.929089","DOIUrl":null,"url":null,"abstract":"Al/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As doped-channel HFETs (DCFETs) demonstrate a high breakdown voltage, a high power density, and a high linearity for microwave power device applications due to the improvement of a larger /spl Delta/E/sub c/ (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at V/sub ds/=3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that the 3rd-order inter-modulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP/sub 3/) is 30.4 dBm for devices with a 1 mm-wide gate.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Al/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As doped-channel HFETs (DCFETs) demonstrate a high breakdown voltage, a high power density, and a high linearity for microwave power device applications due to the improvement of a larger /spl Delta/E/sub c/ (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at V/sub ds/=3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that the 3rd-order inter-modulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP/sub 3/) is 30.4 dBm for devices with a 1 mm-wide gate.