Electrochemical formation of self-assembled nanopore arrays as templates for MBE growth of InP-based quantum wires and dots

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929137

T. Hirano, A. Ito, T. Sato, F. Ishikawa, H. Hasegawa

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Abstract

In this study, attempts were made to optimize the parameters of the electrochemical process to form uniform nanopore arrays in order to utilize them as templates for MBE growth of InP-based quantum wires and quantum dots. Template parameters such as the pore depth, diameter and period were strongly dependent on anodization conditions. Especially, in the pulsed anodization mode, the pore depth could be well controlled in the nanometer range by changing the number of applied pulses. InGaAs MBE growth was attempted using the nanopore templates. Growth of InGaAs in pores took place to a substantial depth of about 100-200 nm. The measured PL spectrum had a new peak at about 1.2 eV in addition to the PL emission from the InP substrate and that of the InGaAs top layer. The new peak was tentatively assigned to be from InGaAs quantum wire arrays embedded in InP pores with a possible alloy composition change.

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自组装纳米孔阵列的电化学形成作为inp基量子线和量子点的MBE生长模板

在本研究中，我们尝试优化电化学过程的参数，以形成均匀的纳米孔阵列，并将其作为基于inp的量子线和量子点的MBE生长模板。模板参数如孔深、直径和周期与阳极氧化条件密切相关。特别是在脉冲阳极氧化模式下，通过改变施加脉冲的次数，可以很好地控制孔隙深度在纳米范围内。利用纳米孔模板尝试了InGaAs MBE的生长。InGaAs在孔隙中的生长深度约为100-200 nm。除了来自InP衬底和InGaAs顶层的PL发射外，测量到的PL光谱在约1.2 eV处有一个新的峰值。新峰暂定为嵌入InP孔中的InGaAs量子线阵列，合金成分可能发生变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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