势垒高度对[110]取向应变量子阱光学各向异性的影响

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929056

Y. Kajikawa

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引用次数: 0

摘要

我们从理论上研究了在[110]取向衬底上生长的应变量子阱(QWs)带间跃迁的极化各向异性。我们采用了包含自旋轨道分离(SO)带的六波段有效质量理论。在Ga/sub x/ in /sub 1-x/P/Al/sub 0.5/ in /sub 0.5/P中生长在[110]GaAs上的不同井宽的量子阱中，布里渊区中心的偏振相关光学矩阵元素作为Ga含量x的函数进行计算。此外，计算是在假设不同势垒高度的情况下进行的。结果表明，当阱宽较窄时，势垒层中的SO带对光学矩阵元件的各向异性行为有关键影响。

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Effects of the barrier height on optical anisotropy of [110]-oriented strained quantum wells

We theoretically investigate the polarization anisotropies of the interband transitions in strained quantum wells (QWs) grown on [110]-oriented substrates. We adopt the six-band effective-mass theory in which the spin-orbit split-off (SO) bands are included. The polarization-dependent optical matrix elements at the Brillouin zone center in Ga/sub x/In/sub 1-x/P/Al/sub 0.5/In/sub 0.5/P QWs having various well widths grown on [110]GaAs are calculated as functions of Ga content x. Furthermore, the calculation is performed assuming various barrier heights. In is shown that the SO band in the barrier layer has the critical influence on the behavior of the anisotropy of the optical matrix elements when the well width is narrow.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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