D. Deppe, C. Cao, O. Shchekin, Z. Zou, H. Chen, T. Boggess, L. Zhang, K. Gundogdu
{"title":"Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters","authors":"D. Deppe, C. Cao, O. Shchekin, Z. Zou, H. Chen, T. Boggess, L. Zhang, K. Gundogdu","doi":"10.1109/ICIPRM.2001.929023","DOIUrl":null,"url":null,"abstract":"In this paper we discuss recent experiments performed to characterize the energy relaxation of charge carriers in self-organized QDs. We find several interesting phenomena in these QDs, including a QD size dependence in the relaxation time. While large InGaAs QDs with closely spaced energy levels show relaxation times from the QD wetting layer to the 0-dimensional ground state of /spl sim/1 ps, smaller InAs QDs with more widely spaced energy levels show relaxation times of /spl sim/7 ps. In addition, an interesting pump dependence exists for the relaxation time (as measured by the radiative emission) for the first excited radiative transition to the ground state transition.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper we discuss recent experiments performed to characterize the energy relaxation of charge carriers in self-organized QDs. We find several interesting phenomena in these QDs, including a QD size dependence in the relaxation time. While large InGaAs QDs with closely spaced energy levels show relaxation times from the QD wetting layer to the 0-dimensional ground state of /spl sim/1 ps, smaller InAs QDs with more widely spaced energy levels show relaxation times of /spl sim/7 ps. In addition, an interesting pump dependence exists for the relaxation time (as measured by the radiative emission) for the first excited radiative transition to the ground state transition.