MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929113

W.K. Liu, D. Lubyshev, Y. Wu, X. Fang, T. Yurasits, A. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlstrom, P. Sundararajan, T. Mathew, M. Rodwell

引用次数: 5

Abstract

InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 /spl Aring/ and doped at 4/spl times/10/sup 19/ cm/sup -3/ were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts.

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大直径inp基晶格匹配和变质HBTs的MBE生长

采用分子束外延的方法，在InP衬底上生长出晶格匹配的InAlAs/InGaAs/InP异质结双极晶体管(HBT)结构，并在GaAs衬底上变形。选择了薄基底为500 /spl的通用结构，并以4/spl倍/10/sup 19/ cm/sup -3/的频率掺杂，以支持先进无线和光纤通信产品所需的频率响应。发现铍和碳掺杂的大面积器件具有相似的直流特性。与晶格匹配器件相比，变形器件的电流增益或线性度没有显著差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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