GaInAsN based lasers for the 1.3 and 1.5 /spl mu/m wavelength range

Abstract

Since the introduction of the GaAs based material system GaInAsN for long wavelength laser diodes several years ago, rapid progress has been made in improving the performance of these devices. We present some of our efforts and results in the optimized growth of GaInAsN/GaAs quantum well structures in the 1.3-1.55 /spl mu/m wavelength region by solid source MBE using an RF plasma source for the generation of active nitrogen. Based on this preliminary work, we have fabricated GaInAsN LDs with emission wavelengths up to >1.5 /spl mu/m. Laser performance data for 1.3 and 1.5 /spl mu/m devices are presented and compared.