沟槽型窄InGaAs量子线的负差分电阻

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929195

K. Jang, T. Sugaya, K. Matsumo, T. Shimizu, M. Ogura, Y. Sugiyama

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引用次数: 0

摘要

在v槽(311)A InP衬底上成功制备了沟槽型窄InGaAs量子线场效应晶体管(QWRFET)。该栅长为50 nm的沟槽型InGaAs QWR-FET具有明显的基于实际空间转移(RST)的负差分电阻(NDR)特性，具有高峰谷电流比(PVR=6.2)和低起始电压(V/sub NDR/) 0.1 V。如此低的V/sub NDR/以前从未报道过。

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Negative differential resistance in trench-type narrow InGaAs quantum wire

A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space transfer (RST) with a high peak-to-valley current ratio (PVR=6.2) and a low onset voltage (V/sub NDR/) of 0.1 V. Such a low V/sub NDR/ has not been reported before.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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