空穴积累对inp基hemt源电阻、扭结效应和导态击穿的影响:光辐照研究

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929173

T. Suemitsu, H. Fushimi, S. Kodama, S. Tsunashima, S. Kimura

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引用次数: 0

摘要

利用光辐射实验研究了冲击电离空穴对inp基InAlAs/InGaAs hemt的影响。电子-空穴对的产生和随后在器件体中空穴的积累产生两种寄生现象:源区空穴的积累导致源电阻的减小，从而消除了扭结效应。栅极区域的空穴积累使阈值电压发生偏移。这可能是一个正反馈，在器件的导通状态击穿时增加漏极电流。

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Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: light irradiation study

The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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