偏置应力对InAlAs/InGaAs/InP hemt分离降解的影响取决于PCVD形成的钝化膜

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929147

H. Moriguchi, S. Hoshi, T. Ohshima, T. Izumi, M. Tsunotani, T. Kimura

{"title":"偏置应力对InAlAs/InGaAs/InP hemt分离降解的影响取决于PCVD形成的钝化膜","authors":"H. Moriguchi, S. Hoshi, T. Ohshima, T. Izumi, M. Tsunotani, T. Kimura","doi":"10.1109/ICIPRM.2001.929147","DOIUrl":null,"url":null,"abstract":"We have observed the degradation of pinch-off characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) with SiN passivation film after the bias stress test, which has been resulted from an increase of leakage current on InP surface. On the other hand, the device passivated by SiO/sub 2/ film does not show any degradation. The stability of the isolation characteristic for InP is strongly affected by the surface passivation film formed by plasma-enhanced chemical vapor deposition (PCVD). In order to improve the device reliability, SiO/sub 2/ is more suitable than SiN for a stable passivation to InP surface.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD\",\"authors\":\"H. Moriguchi, S. Hoshi, T. Ohshima, T. Izumi, M. Tsunotani, T. Kimura\",\"doi\":\"10.1109/ICIPRM.2001.929147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have observed the degradation of pinch-off characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) with SiN passivation film after the bias stress test, which has been resulted from an increase of leakage current on InP surface. On the other hand, the device passivated by SiO/sub 2/ film does not show any degradation. The stability of the isolation characteristic for InP is strongly affected by the surface passivation film formed by plasma-enhanced chemical vapor deposition (PCVD). In order to improve the device reliability, SiO/sub 2/ is more suitable than SiN for a stable passivation to InP surface.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

在偏置应力测试后，我们观察到InAlAs/InGaAs高电子迁移率晶体管(HEMTs)的掐断特性下降，这是由于InP表面泄漏电流的增加造成的。另一方面，SiO/ sub2 /薄膜钝化后的器件没有出现任何劣化现象。等离子体增强化学气相沉积(PCVD)形成的表面钝化膜对InP隔离特性的稳定性有很大影响。为了提高器件的可靠性，SiO/sub 2/比SiN更适合于对InP表面进行稳定钝化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD

We have observed the degradation of pinch-off characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) with SiN passivation film after the bias stress test, which has been resulted from an increase of leakage current on InP surface. On the other hand, the device passivated by SiO/sub 2/ film does not show any degradation. The stability of the isolation characteristic for InP is strongly affected by the surface passivation film formed by plasma-enhanced chemical vapor deposition (PCVD). In order to improve the device reliability, SiO/sub 2/ is more suitable than SiN for a stable passivation to InP surface.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

自引率

0.00%

发文量