低EPD InP晶体的生长

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929200

R. Hirano, A. Noda

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引用次数: 1

摘要

采用改进的LEC法制备了无位错(DF) (EPD<500/cm/sup 2/) S掺杂InP晶体。采用热挡板法生长直径为2英寸的InP晶体，采用磷气控LEC法(PC-LEC)生长直径为3英寸的InP晶体。DF晶体在形状上变得有点矩形，并且在锭的圆柱形部分上的饰面发生在生长过程中。为了生长低EPD的单晶，需要使用化学计量多晶。

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Growth of low EPD InP crystals

Dislocation free (DF) (EPD<500/cm/sup 2/) S doped InP crystals have been grown by modified LEC method. 2-inch diameter InP crystals were grown by thermal baffle technology and 3-inch diameter crystals were grown by phosphorus vapor controlled LEC method (PC-LEC). The DF crystals become somewhat rectangular in shape and the faceting on the cylindrical part of the ingots takes place during the growth. To grow the single crystals with low EPD, it needs to use the stoichiometric polycrystals.

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来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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