在3英寸InP衬底上实现0.1 /spl μ m InGaAs/InAlAs/InP HEMT mmic的高可靠性

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929231

Y. Chou, D. Leung, J. Scarpulla, R. Lai, M. Barsky, R. Grundbacher, M. Nishimoto, P. Liu, D. Streit

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引用次数: 4

摘要

本文报道了在3英寸晶圆上采用栅极长度为0.1 /spl mu/m的InGaAs/InAlAs/InP hemt制成的k波段MMIC放大器的高可靠性性能。在Vds=1.5 V, Ids=150 mA/mm的加速寿命试验条件下，对两级平衡放大器在氮气环境下的两种温度(T/sub 1/=230/spl°C, T/sub 2/=250/spl°C)下进行寿命试验。活化能(Ea)高达1.5 eV，在125/spl℃结温下，预计中位失效时间(MTF)>1/spl次/10/sup 6/小时。MTF采用2T恒流应力，失效准则为|/spl Delta/S21|>1.0 dB。这是基于小信号微波特性的高可靠性0.1 /spl mu/m InGaAs/InAlAs/InP HEMT mmic的首次报道。这一结果证明了一种可靠的InGaAs/InAlAs/InP HEMT生产技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates

The high-reliability performance of K-band MMIC amplifiers fabricated with 0.1 /spl mu/m gate length InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5 V and Ids=150 mA/mm, two-stage balanced amplifiers were life tested at two-temperatures (T/sub 1/=230/spl deg/C, and T/sub 2/=250/spl deg/C) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTF)>1/spl times/10/sup 6/ hours at a 125/spl deg/C junction temperature. MTF was determined by 2T constant current stress using |/spl Delta/S21|>1.0 dB as the failure criteria. This is the first report of high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology.

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来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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