氨(NH/sub 3/)等离子体表面钝化InP/InGaAs异质结双极晶体管

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929148

Hong Wang, G. Ng, Hong Yang, K. Radhakrishnan

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引用次数: 3

摘要

本文报道了氨(NH/sub 3/)等离子体表面钝化InP/InGaAs HBT的实验结果。发现NH/sub - 3/等离子体处理可以减少表面复合，从而提高电流增益。该钝化机制与氢氮等离子体处理砷化镓HBT的钝化机制相似。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs heterojunction bipolar transistors

In this study, we report on the experimental results of ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs HBT's. The NH/sub 3/ plasma treatment is found to reduce the surface recombination and thus improve the current gain. The passivation mechanism is believed to be similar to that of H and N plasma treatment for GaAs HBT's.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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