GaAs衬底上TlInGaAs层的气源MBE生长

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929129

H. Lee, A. Mizobata, O. Maeda, K. Konishi, K. Asami, H. Asahi

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引用次数: 1

摘要

提出了一种新型合金半导体异质结构TlInGaAsN/AlGaAs，用于制备波长为1.3 ~ 1.55 μ l /m的具有稳温阈值电流和稳温激光波长的激光二极管。采用气源分子束外延(MBE)技术在GaAs衬底上生长了TlInGaAs/GaAs和InGaAs/GaAs双异质(DH)和多异质(HD)结构。通过反射高能电子衍射(RHEED)强度振荡证实了Tl在TlInGaAs中的掺入率高达9%。TlInGaAs/GaAs DW和MH样品的光致发光(PL)峰值能量也发生了红移，这与Tl的掺入一致。

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Gas source MBE growth of TlInGaAs layers on GaAs substrates

New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 /spl mu/m wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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