Ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs heterojunction bipolar transistors

Abstract

In this study, we report on the experimental results of ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs HBT's. The NH/sub 3/ plasma treatment is found to reduce the surface recombination and thus improve the current gain. The passivation mechanism is believed to be similar to that of H and N plasma treatment for GaAs HBT's.