InGaP/GaAs DHBTs with composite collectors for power amplifiers

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929094

Y. Hsin, Chih-Hsien Lin, C. Fan, Shih-Tzung Su, M.H.T. Yang, J.C. Huang, K. Lin

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引用次数: 1

Abstract

InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collectors have been proposed, simulated and fabricated for power amplifier applications in wireless communication. The composite collector combines wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. InGaP provides a high breakdown field and thus can be employed to reduce collector thickness while maintaining breakdown voltage. GaAs provides high electron mobility and thus is able to be used to reduce on-resistance and transit time. Three InGaP/GaAs HBTs with different collector structures have been grown, fabricated and characterized. The Gummel plots from simulation and measurement for the proposed DHBT show negligible difference in current gains, which is due to the identical structures in base/emitter regions and effectively reduced conduction spike in the base-collector junction. Overall, this DHBT with displays improved performance in on-resistance and knee voltage.

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功率放大器用带复合集热器的InGaP/GaAs dhbt

采用复合集电极的InGaP/GaAs双异质结双极晶体管(dhbt)已被提出、仿真和制备，用于无线通信中的功率放大器。复合集热器结合了宽带隙(InGaP)和窄带隙(GaAs)材料。InGaP提供高击穿场，因此可以在保持击穿电压的同时减小集电极厚度。砷化镓提供了高电子迁移率，因此能够用于减少导通电阻和传递时间。本文生长、制备并表征了三种不同集电极结构的InGaP/GaAs HBTs。模拟和测量的Gummel图显示，由于基极/发射极区域的结构相同，并且有效地降低了基极-集电极结的传导尖峰，电流增益的差异可以忽略不计。总体而言，该DHBT在导通电阻和膝电压方面显示出改进的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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