量子点红外探测器的物理模型与特性

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929138

V. Ryzhii, I. Khmyrova, V. Pipa, M. Ryzhii, V. Mitin, M. Willander

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引用次数: 1

摘要

建立了量子点红外探测器(qdip)的物理模型。利用该模型，我们计算了QDIP中的暗电流和光电流作为QDIP结构参数和外加电压的函数。得到的结果澄清了实验观察到的QDIP特性的一些有趣的特征，特别是暗电流和光电流随着施加电压的增加而急剧(指数)上升，并且出现负微分光电导率。

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Physical model and characteristics of quantum dot infrared photodetectors

We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with increasing applied voltage and the occurrence of negative differential photoconductivity.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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