Physical model and characteristics of quantum dot infrared photodetectors

Abstract

We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with increasing applied voltage and the occurrence of negative differential photoconductivity.