Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929092

Hong Yang, Hong Wang, G. Ng, Haiqun Zheng, K. Radhakrishnan

引用次数: 2

Abstract

A detailed DC characterization of metamorphic InP/InGaAs/InP DHBT's in the temperature range of 300 K to 400 K was carried out and the carrier transport properties were investigated. Our experiments reveal that band-to-band recombination is the dominant mechanism for the base current indicating the good base material quality for the metamorphic HBT structures.

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高温下高增益变质InP/InGaAs异质结双极晶体管的器件性能和输运特性

对InP/InGaAs/InP变质DHBT在300 ~ 400 K的温度范围内进行了详细的直流表征，并对其载流子输运性质进行了研究。我们的实验表明，带间复合是基极电流的主要机制，表明变质HBT结构具有良好的基材质量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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