氧吸附GaAs[001]表面的研究

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929122

Y. Kasai, Y. Yamamura, T. Inokuma, K. Iiyama, S. Takamiya

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引用次数: 1

摘要

研究了ph控制的化学预处理对Ni/n-GaAs结肖特基势垒高度的影响。处理表面的x射线光电子能谱(XPS)分析表明，表面氧密度的差异是导致不同电特性的原因。为了了解其作用机理，采用第一性原理计算方法研究了吸附氧原子和不吸附氧原子的GaAs(001)表面的电子态，并与Ni/n-GaAs(OOl) Schottky结的实验结果进行了比较。

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Study of GaAs[001] surface with adsorbed oxygen

The authors have investigated the effect of pretreatment by pH-controlled chemicals on Schottky barrier heights of Ni/n-GaAs junctions. An X-ray photoelectron spectroscopy (XPS) analysis of the treated surface suggested that difference in surface oxygen densities is the cause of the different electrical characteristics. In order to comprehend it’s mechanism, electronic state of GaAs(001) surfaces with and without adsorbed oxygen atoms were studied ,using first-principle calculation and compared with experimental results of Ni/n-GaAs(OOl) Schottky junctions.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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