InGaAs/AlAsSb量子阱子带间跃迁非线性及响应速度评价

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929031

A. Gopal, H. Yoshida, T. Akiyama, A. Neogi, T. Mozume, N. Georgiev, O. Wada

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引用次数: 0

摘要

我们报告了在室温下InGaAs/AlAsSb量子阱中饱和强度的第一个可靠估计，该估计是通过对记录为温度和泵浦-探针松弛时间(/spl tau//spl ap/2.1 psec)的函数的吸收光谱进行仔细的线形分析得出的均匀线宽。在1.92 /spl mu/m激发波长下，饱和强度的估计值为52/spl plusmn/5 MW cm/sup 2/。我们进行了直接饱和度测量来估计线性吸收系数(/spl alpha//sub 0/)和三阶磁化率(/spl chi//sup(3)/)。我们观察到一个巨大的/spl chi//sup(3)/约为8.2/spl倍/10/sup -15/ m/sup 2//V/sup 2/。线性吸收系数为3370 cm/sup -1/。根据这些值，我们估计该材料的优点值为1.2/spl倍/10/sup -8/ m/sup 3/ V/sup -2/s/sup -1/。

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Nonlinearity and response speed evaluation of intersubband transition in InGaAs/AlAsSb quantum well

We report the first reliable estimate of the saturation intensity in InGaAs/AlAsSb quantum wells using the homogeneous linewidth estimated from a careful lineshape analysis of the absorption spectra recorded as a function of temperature and the pump-probe relaxation time (/spl tau//spl ap/2.1 psec) at room temperature. The estimated value of saturation intensity is 52/spl plusmn/5 MW cm/sup 2/ at an excitation wavelength of 1.92 /spl mu/m. We performed a direct saturation measurement to estimate the linear absorption coefficient (/spl alpha//sub 0/) and the 3rd order susceptibility (/spl chi//sup (3)/). We observed a giant /spl chi//sup (3)/ of about 8.2/spl times/10/sup -15/ m/sup 2//V/sup 2/. The linear absorption coefficient is evaluated to be 3370 cm/sup -1/. From these values we estimated the figure of merit to be 1.2/spl times/10/sup -8/ m/sup 3/ V/sup -2/s/sup -1/ in this material.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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