氮化硅钝化诱导InP/InGaAs异质结双极晶体管退化的研究

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929105

Hong Wang, G. Ng, Hong Yang, K. Radhakrishnan

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引用次数: 8

摘要

研究了SiN钝化对InP/InGaAs HBT电学特性的影响。在我们的InP/InGaAs HBT中发现的I-V特性的主要退化是:(1)由于基极正向泄漏电流的显着增加而导致电流增益的降低;(2)基极集电极(B-C)和基极发射极(B-E)反向泄漏电流的大幅增加。我们发现这两种降解行为的物理成因不同。

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Understanding the degradation of InP/InGaAs heterojunction bipolar transistors induced by silicon nitride passivation

The effect of SiN passivation on the electrical characteristics of InP/InGaAs HBT's has been investigated comprehensively. The major degradations of I-V characteristics identified in our InP/InGaAs HBT's are: (1) the decrease of current gain due to a significant increase in the forward base leakage current and (2) large increase of base-collector (B-C) and base-emitter (B-E) reverse leakage currents. We found that different physical origins should be attributed to these two degradation behaviors.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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