1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献_第3页

Inverse modeling profile determination: implementation issues and recent results 逆建模概要文件确定:实现问题和最近的结果

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865254

N. Khalil, J. Faricelli

引用次数: 2

Advanced geometric techniques in 3D process simulation 先进的几何技术在三维过程模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865323

N.A. Golias, R. Dutton

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引用次数: 0

A new high-speed non-equilibrium point defect model for annealing simulation 一种新的高速非平衡点缺陷退火模拟模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865288

M. Kawakami, M. Sugaya, S. Kamohara

引用次数: 0

Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector 砷化镓金属-半导体-金属(MSM)光电探测器的光电模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865267

T. Korner, P. D. Yoder, L. Bomholt, W. Fichtner

引用次数: 4

A novel transient enhanced diffusion model of phosphorus during shallow junction formation 一种新的磷在浅结形成过程中的瞬态增强扩散模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865289

H. Sato, K. Aoyama, K. Tsuneno, H. Masuda

引用次数: 0

Computational performance of level set methods for etching, deposition, and lithography development 蚀刻、沉积和光刻发展的水平集方法的计算性能

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865281

D. Adalsteinsson, J. Sethian

引用次数: 1

Fast step coverage simulation for 3D contact hole with analytical integral 三维接触孔的解析积分快速步进覆盖仿真

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865282

T. Shinzawa, H. Kato

引用次数: 0

An implicit coupling scheme for the use of long time steps in stable self-consistent particle simulation of semiconductor devices with high doping levels 在高掺杂水平半导体器件的稳定自一致粒子模拟中使用长时间步长的隐式耦合方案

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865266

D. Liebig, A. Abou Elnour, K. Schunemann

引用次数: 1

An interpolation technique for the numerical solution of the rate equations in extended defect simulation 扩展缺陷模拟中速率方程数值解的插值技术

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865262

O. Dokumaci, M. Law

引用次数: 0

Numerical simulations of surface states effects on GaAs power MESFETs 表面态对GaAs功率mesfet影响的数值模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865302

P. Francis, Y. Ohno, M. Nogome, Y. Takahashi

引用次数: 1