A novel transient enhanced diffusion model of phosphorus during shallow junction formation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865289

H. Sato, K. Aoyama, K. Tsuneno, H. Masuda

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Abstract

High-dose ion implantation and low temperature annealing are one of the key technologies for shallow junction fabrication in quarter-micron CMOS VLSIs. It is well known that transient enhanced diffusion (TED) of implanted dopants dominates in diffusion mechanism at low temperature furnace annealing and RTA (Rapid Thermal Annealing). We reported an empirical compact model of TED which describes its dependency on implant doses and annealing temperature. However, the model assumes effective diffusivity during the 10 minutes in furnace annealing, therefore it fails to describe time-dependent TED effect such as short-time RTA and ramping-effect in furnace annealing. In this work, a new study on transient enhanced diffusion is discussed, which is focused on the RTA process for phosphorus diffusion. The dependency of annealing time on TED phenomenon is newly characterized as parameters of annealing temperature and implant dose in the new model.

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一种新的磷在浅结形成过程中的瞬态增强扩散模型

高剂量离子注入和低温退火是制造1 / 4微米CMOS vlsi浅结的关键技术之一。众所周知，在低温退火和快速退火过程中，注入掺杂剂的瞬态增强扩散(TED)在扩散机制中占主导地位。我们报道了TED的经验紧凑模型，该模型描述了其对植入物剂量和退火温度的依赖。然而，该模型假设了炉内退火10分钟内的有效扩散率，因此无法描述炉内退火过程中的短时RTA和斜坡效应等随时间变化的TED效应。本文讨论了一种新的瞬态强化扩散的研究方法，重点研究了磷扩散的RTA过程。在新模型中，退火时间对TED现象的依赖性被表征为退火温度和植入物剂量的参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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