1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献

Accuracy and convergence properties of a one-dimensional numerical non-quasi-static MOSFETs model for circuit simulation 用于电路仿真的一维非准静态mosfet数值模型的精度和收敛性

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865328

E. Robilliart, E. Dubois

{"title":"Accuracy and convergence properties of a one-dimensional numerical non-quasi-static MOSFETs model for circuit simulation","authors":"E. Robilliart, E. Dubois","doi":"10.1109/SISPAD.1996.865328","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865328","url":null,"abstract":"Accurate modeling of static currents, conductance and charge dynamics are essential for the design of digital and specially for analog circuits. In the analog domain, the shortcomings of many modeling approaches often originate from transistors biased between linear and saturation regimes where discontinuities limit the accuracy and the convergence properties. Moreover, the finite charging/discharging time of the channel may significantly degrade the performances of modern circuit architectures due to charge injection. However, most MOSFET models reveal poor prediction capabilities for high frequency operations for which quasi-static (QS) operation is often violated. In this paper we discuss the accuracy and numerical properties of a one-dimensional CAD-oriented model. It is shown that the proposed model is continuous over all operating regimes and suitable for the analysis of long and short channel MOSFETs. The most interesting feature of our model, an implicit non-quasi-static (NQS) treatment of the charge redistribution, is outlined. Finally, convergence properties are discussed with a special emphasis on the mobility model and on the related nonlinear resolution scheme.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124265079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Robust simulation for the hysteresis phenomena of SOI MOSFET's by quasi-transient method 准瞬态方法对SOI MOSFET滞回现象的鲁棒模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865296

R. Ikeno, K. Asada

引用次数: 0

Cellular automata for device simulation-concepts and applications 设备模拟的元胞自动机。概念和应用

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865263

G. Zandler, M. Saraniti, A. Rein, P. Vogl

引用次数: 0

Analysis of boron pile-up at the Si-SiO/sub 2/ interface using 2-D process and device simulation 基于二维工艺和器件仿真的Si-SiO/sub - 2/界面硼堆积分析

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865285

T. Hyodo, S. Taji, N. Yoshida, M. Kameda, H. Watanabe, I. Shiota

引用次数: 0

Elasto-viscoplastic modeling for three-dimensional oxidation process simulation 三维氧化过程模拟的弹粘塑性建模

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865283

J. Lee, M. Son, C. S. Yun, K. Kim, H. Hwang

{"title":"Elasto-viscoplastic modeling for three-dimensional oxidation process simulation","authors":"J. Lee, M. Son, C. S. Yun, K. Kim, H. Hwang","doi":"10.1109/SISPAD.1996.865283","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865283","url":null,"abstract":"With continued minimization of the device structure and the development of new semiconductor process, the characteristics of submicron transistors in ULSI or GSI technologies are strongly affected by multi-dimensional device structure. Process simulations have contributed to a better understanding of device physics and to the development of new processing techniques. Device isolation has been most commonly achieved through the use of LOCOS (LOCal Oxidation of Silicon) or LOCOS derivatives due to its process simplicity and excellent isolation characteristics. With device sizes shrinking, three-dimensional oxidation process simulations are required to predict the accurate shape of the oxide, the stress distribution and the three-dimensional effects, such as center effect and mask lifting effect. Therefore more accurate and robust oxidation model is needed in order to ensure optimal control of the technological oxidation process. In this paper, we developed the three-dimensional process simulator of oxidation with a newly proposed elastoviscoplastic model. In this model, the oxidant diffusion is solved by BEM (Boundary Element Method) which is suitable for moving boundary condition and surface mesh.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117090881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Three-dimensional photoresist exposure and development simulation 三维光刻胶曝光与显影模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865291

H. Kirchauer, Siegfried Selberherr

引用次数: 4

Modeling and characterization of three-dimensional effects in physical etching and deposition simulation 物理蚀刻和沉积模拟中三维效应的建模和表征

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865279

Z. Hsiau, E. Kan, D. Bang, J. Mcvittie, R. Dutton

引用次数: 0

Importance of inter-valley phonon scattering on mobility enhancement in strained Si MOSFETs 谷间声子散射对应变Si mosfet迁移率增强的重要性

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865247

S. Takagi, J. Hoyt, J. Welser, J. Gibbons

引用次数: 3

Two-dimensional calibration of dopant transport models for submicron CMOS transistors 亚微米CMOS晶体管掺杂输运模型的二维定标

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865299

F. Lau, P. Kupper, K. Gebhardt

引用次数: 1

A triangular mesh with the interface protection layer suitable for the diffusion simulation 具有界面保护层的三角形网格适合于扩散模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865325

T. Syo, Y. Akiyama, S. Kumashiro, I. Yokota, S. Asada

引用次数: 2