1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献_第2页

Simulation of thermal oxidation and diffusion processes by parallel PDE solver L/sub i/SS 用并行PDE求解器L/sub /SS模拟热氧化和扩散过程

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865286

W. Joppich, S. Mijalkovic

引用次数: 0

Accurate chip scale topography modeling in O(n) run time 精确的芯片尺度地形建模在O(n)运行时间

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865320

K. Lucas, X. Li, M. Noell, C. Yuan, A. Strojwas

引用次数: 1

Temperature-dependent study of 6H-SiC pin-diode reverse characteristics 6H-SiC针脚二极管反向特性的温度依赖性研究

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865271

M. Lades, A. Schenk, U. Krumbein, G. Wachutka, W. Fichtner

引用次数: 3

A realistic methodology for the worst case analysis of VLSI circuit performances VLSI电路性能最坏情况分析的现实方法

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865318

Sang-Hoon Lee, Kyung-Ho Kim, Jin-Kyu Park, Chang-hoon Choi, J. Kong, Won-Woo Lee, Wong-Seong Lee, Jei-Hwan Yoo, Sooin Cho

{"title":"A realistic methodology for the worst case analysis of VLSI circuit performances","authors":"Sang-Hoon Lee, Kyung-Ho Kim, Jin-Kyu Park, Chang-hoon Choi, J. Kong, Won-Woo Lee, Wong-Seong Lee, Jei-Hwan Yoo, Sooin Cho","doi":"10.1109/SISPAD.1996.865318","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865318","url":null,"abstract":"Summary form only given. Minimising the circuit layout feature size can lead to improved performance, but it may also reduce the manufacturing yield. The smaller dimensions increase the relative variability of the process and make the circuit sensitive to process fluctuations such as, photo mask, depo/etch and furnace. In order to produce circuit designs that are more robust, it is crucial for designers to verify that circuit performances meet specifications across the entire range of process fluctuations. The driving force of previous work has thus been to come up with a simple and effective worst case design. In this work, a new approach to the statistical worst case of full-chip circuits, using the Principal Component Analysis (PCA) and the Gradient Analysis (GA), is proposed and verified. This method enables designers not only to predict the standard deviations of circuit performance but also to track circuit performances associated with process shift by measuring e-tests. Experimental qualification of the method is described using a 0.25 /spl mu/m 256 Mbit DRAM.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116069594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

TED model including the dissolution of extended defects TED模型包括扩展缺陷的溶解

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865284

S. Kamohara, A. Shimizu, S. Yamamoto, K. Kubota

引用次数: 0

The application of TCAD in industry TCAD在工业中的应用

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865313

J. Mar

引用次数: 13

Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs 锗、硅和砷化镓中电子和空穴的高能输运和冲击电离的全波段蒙特卡罗模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865265

M. Fischetti, N. Sano, S. Laux, K. Natori

引用次数: 12

Soft error rate modeling and analysis of SOI/TFT SRAM's SOI/TFT SRAM软错误率建模与分析

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865297

P. Oldiges

引用次数: 0

BARAS: Novel and highly efficient simulation system for process control sweeping and statistical variation BARAS:用于过程控制、扫描和统计变化的新型高效仿真系统

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865315

T. Tatsumi, K. Ansai, K. Hayakawa, M. Mukai

{"title":"BARAS: Novel and highly efficient simulation system for process control sweeping and statistical variation","authors":"T. Tatsumi, K. Ansai, K. Hayakawa, M. Mukai","doi":"10.1109/SISPAD.1996.865315","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865315","url":null,"abstract":"For the realization of today's miniaturization and low voltage drive of ULSIs, it has become much more important to understand and predict the effect of process variations on device performance. Predicting the quantitative effect of every process variation on device characteristics has the following advantages: in designing, required performance range can be appropriately specified, and in manufacturing, when some device characteristic is out of specification, processes to control can be feed-forwarded for proper production. In order to realize this by utilizing simulations, it would be crucial for the simulation system to have a user interface with ease of operation and an efficient data processing ability based on the actual process parameter distribution of the manufacturing equipment. There are some simulation tools which enable the above tasks. However, they have difficulty in handling mask shape variations and in utilizing actual process distributions which do not follow the Gaussian distribution. We have developed BABAS, the automatic simulation system capable of very efficient process control sweeping, statistical variation analysis and output data processing, which has functions for producing input data files automatically and has an easy-to-use GUI. Furthermore, BABAS has succeeded in reducing CPU time drastically by utilizing moment expansion method and enabled Monte Carlo simulations based on real process parameter variations.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122377698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A new approach to fully unstructured three-dimensional Delaunay mesh generation with improved element quality 一种改进单元质量的完全非结构化三维德劳内网格生成新方法

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865308

P. Fleischmann, S. Selberherr

引用次数: 11