Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs

M. Fischetti, N. Sano, S. Laux, K. Natori
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引用次数: 12

Abstract

In this work we have computed the rate for impact ionization ab initio and have employed this rate in full-band Monte Carlo simulations in order to determine the high-energy carrier-phonon deformation potentials. We have considered transport and impact ionization of electrons and holes in Ge, Si, and GaAs, the valence bands being treated with nonlocal empirical pseudopotentials and spin-orbit interaction. The impact ionization rates have been computed using three different approximations: (1) the ab initio rate, which accounts for energy and momentum conservation and for the dependence of the Coulomb matrix element on both initial and final states, (2) the constant-matrix-element (CME) approximation, which employee a constant Coulomb matrix element, and (3) the random-k approximation, which relaxes momentum-conservation.
锗、硅和砷化镓中电子和空穴的高能输运和冲击电离的全波段蒙特卡罗模拟
在这项工作中,我们从头计算了碰撞电离率,并在全频带蒙特卡罗模拟中使用了该速率,以确定高能载流子-声子变形势。我们考虑了锗、硅和砷化镓中电子和空穴的输运和冲击电离,用非局域经验赝势和自旋轨道相互作用处理价带。撞击电离率的计算使用了三种不同的近似:(1)从头计算速率,它考虑了能量和动量守恒以及库仑矩阵元素对初始和最终状态的依赖;(2)常数矩阵元素(CME)近似,它使用了一个常数库仑矩阵元素;(3)随机k近似,它放松了动量守恒。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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