{"title":"Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs","authors":"M. Fischetti, N. Sano, S. Laux, K. Natori","doi":"10.1109/SISPAD.1996.865265","DOIUrl":null,"url":null,"abstract":"In this work we have computed the rate for impact ionization ab initio and have employed this rate in full-band Monte Carlo simulations in order to determine the high-energy carrier-phonon deformation potentials. We have considered transport and impact ionization of electrons and holes in Ge, Si, and GaAs, the valence bands being treated with nonlocal empirical pseudopotentials and spin-orbit interaction. The impact ionization rates have been computed using three different approximations: (1) the ab initio rate, which accounts for energy and momentum conservation and for the dependence of the Coulomb matrix element on both initial and final states, (2) the constant-matrix-element (CME) approximation, which employee a constant Coulomb matrix element, and (3) the random-k approximation, which relaxes momentum-conservation.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
In this work we have computed the rate for impact ionization ab initio and have employed this rate in full-band Monte Carlo simulations in order to determine the high-energy carrier-phonon deformation potentials. We have considered transport and impact ionization of electrons and holes in Ge, Si, and GaAs, the valence bands being treated with nonlocal empirical pseudopotentials and spin-orbit interaction. The impact ionization rates have been computed using three different approximations: (1) the ab initio rate, which accounts for energy and momentum conservation and for the dependence of the Coulomb matrix element on both initial and final states, (2) the constant-matrix-element (CME) approximation, which employee a constant Coulomb matrix element, and (3) the random-k approximation, which relaxes momentum-conservation.