Temperature-dependent study of 6H-SiC pin-diode reverse characteristics

Abstract

Silicon carbide is a promising material for special semiconductor applications, such as high-power and high-temperature devices. To date, much effort has been devoted to improving the process and device technology. With the progress in this field, the need for accurate modeling of device characteristics arises. This implies the formulation of proper physical models and their validation. We report on investigations of the reverse characteristics of a 6H-SiC pin diode using the multi-dimensional device simulator DESSIS/sub -ISE/ discussing the contributions of different physical mechanisms to the blocking behavior and their temperature dependence in the range of 300-623 K.