1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献_第8页

A new approach to mesh generation for complex 3D semiconductor device structures 复杂三维半导体器件结构网格生成的新方法

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865322

K. Tanaka, A. Notsu, H. Matsumoto

引用次数: 2

Application of LE-FDTD method to HF circuit analysis LE-FDTD法在高频电路分析中的应用

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865270

P. Ciampolini, L. Roselli, S. Catena

{"title":"Application of LE-FDTD method to HF circuit analysis","authors":"P. Ciampolini, L. Roselli, S. Catena","doi":"10.1109/SISPAD.1996.865270","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865270","url":null,"abstract":"A circuit simulation technique is discussed, which accounts for the \"full-wave\" analysis of signal propagation along the interconnections of an arbitrary circuit, including active, non-linear devices. A number of electromagnetic propagation effects have significant influence over high-frequency (either analog or digital) circuit performances and can be accurately modeled by means of the approach described: among them, interconnection behavior, cross-talk phenomena, package interactions. Conventional circuit CAD tools allow the analysis of such effects by resorting to equivalent-circuit, lumped-element descriptions of interconnecting lines. Although this technique is highly computationally efficient, the definition of the equivalent circuit topology and the estimation of its parameters often relies on rather drastic approximations, because of the inherently \"distributed\" nature of most propagation effects. To tackle this problem, the Lumped-Element, Finite-Difference Time-Domain (LE-FDTD) technique has been conceived. Within this approach, SPICE-like compact device models are coupled to the numerical solutions of Maxwell's equation over distributed domains. The extension of LE-FDTD technique to circuits including GaAs MESFET devices is reported, and a few simulation examples are illustrated.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128182993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling tunneling through ultra-thin gate oxides 超薄栅极氧化物隧道建模

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865248

A. Schenk

引用次数: 3

Phosphorus pile-up model for SiO/sub 2/-Si interface of p-channel MOSFETs p沟道mosfet SiO/sub - 2/-Si界面磷堆积模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865258

M. Akazawa, T. Aoki, S. Tazawa, Y. Sato

引用次数: 1

Energy transport modeling of graded AlGaAs/GaAs HBTs: importance of giving adequate transport parameters 梯度AlGaAs/GaAs HBTs的能量输运建模:给出适当输运参数的重要性

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-01 DOI: 10.1109/SISPAD.1996.865269

K. Okada, A. Nakatani, K. Horio

引用次数: 1

Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs GaAs mesfet中慢电流瞬态表面态效应的二维模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-01 DOI: 10.1109/SISPAD.1996.865306

T. Yamada, K. Horio

引用次数: 0

Theory and implementation of a new interpolation method based on random sampling 一种新的基于随机抽样的插值方法的原理与实现

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1900-01-01 DOI: 10.1109/SISPAD.1996.865319

W. Schoenmaker, R. Cartuyvels

引用次数: 4

A numerical model for simulating MOSFET gate current degradation by considering the interface state generation 一种考虑界面态产生的MOSFET栅极电流退化的数值模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1900-01-01 DOI: 10.1109/SISPAD.1996.865301

C. Yih, S.S. Chung, C. Hsu

引用次数: 4

Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels 反演通道中电子的局部和有效横向场依赖迁移率的基本关系

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1900-01-01 DOI: 10.1109/SISPAD.1996.865295

S. Biesemans, K. De Meyer

引用次数: 2