Application of LE-FDTD method to HF circuit analysis

P. Ciampolini, L. Roselli, S. Catena
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Abstract

A circuit simulation technique is discussed, which accounts for the "full-wave" analysis of signal propagation along the interconnections of an arbitrary circuit, including active, non-linear devices. A number of electromagnetic propagation effects have significant influence over high-frequency (either analog or digital) circuit performances and can be accurately modeled by means of the approach described: among them, interconnection behavior, cross-talk phenomena, package interactions. Conventional circuit CAD tools allow the analysis of such effects by resorting to equivalent-circuit, lumped-element descriptions of interconnecting lines. Although this technique is highly computationally efficient, the definition of the equivalent circuit topology and the estimation of its parameters often relies on rather drastic approximations, because of the inherently "distributed" nature of most propagation effects. To tackle this problem, the Lumped-Element, Finite-Difference Time-Domain (LE-FDTD) technique has been conceived. Within this approach, SPICE-like compact device models are coupled to the numerical solutions of Maxwell's equation over distributed domains. The extension of LE-FDTD technique to circuits including GaAs MESFET devices is reported, and a few simulation examples are illustrated.
LE-FDTD法在高频电路分析中的应用
讨论了一种电路仿真技术,该技术可以对信号沿任意电路(包括有源非线性器件)的互连传播进行“全波”分析。许多电磁传播效应对高频(模拟或数字)电路性能有重大影响,可以通过所描述的方法精确建模:其中,互连行为,串扰现象,封装相互作用。传统的电路CAD工具允许通过对互连线路的等效电路、集总元素描述来分析这种影响。虽然这种技术具有很高的计算效率,但等效电路拓扑的定义及其参数的估计往往依赖于相当激烈的近似,因为大多数传播效应固有的“分布式”性质。为了解决这一问题,提出了集总元时域有限差分(LE-FDTD)技术。在这种方法中,类似spice的紧凑器件模型与分布域上麦克斯韦方程的数值解相耦合。本文报道了将LE-FDTD技术扩展到包括GaAs MESFET器件在内的电路中,并举例说明了一些仿真实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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