Energy transport modeling of graded AlGaAs/GaAs HBTs: importance of giving adequate transport parameters

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-01 DOI:10.1109/SISPAD.1996.865269

K. Okada, A. Nakatani, K. Horio

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引用次数: 1

Abstract

AlGaAs/GaAs HBTs have received great interest for applications to high-speed and high-frequency devices and ICs. Since nonequilibrium carrier transport becomes important in the HBTs, carrier energy must be considered in the modeling of them. For this purpose, an energy transport model that uses hydrodynamic equations derived from the Boltzmann equation is attractive and has been applied to AlGaAs/GaAs HBTs. In the HBTs, material parameters should depend on material composition as well as carrier energy and the doping densities. However, up to now, methods of giving parameters in the transport equations were too crude. A constant value of energy relaxation time was assumed and parameters for GaAs at a certain doping density were also assumed for all x in Al/sub x/Ga/sub 1-x/As. In this work, a method of giving composition-, doping-, and energy-dependent transport parameters is proposed, and successfully applied to the simulation of AlGaAs/GaAs HBTs.

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梯度AlGaAs/GaAs HBTs的能量输运建模:给出适当输运参数的重要性

AlGaAs/GaAs hbt在高速高频器件和集成电路中的应用受到了极大的关注。由于非平衡载流子输运在hbt中非常重要，因此在对其进行建模时必须考虑载流子能量。为此，使用由玻尔兹曼方程导出的流体动力学方程的能量输运模型很有吸引力，并已应用于AlGaAs/GaAs HBTs。在hbt中，材料参数应取决于材料成分、载流子能量和掺杂密度。然而，到目前为止，在输运方程中给出参数的方法过于粗糙。假设Al/sub x/Ga/sub - 1-x/As中所有x在一定掺杂密度下的能量松弛时间为恒定值，并假设GaAs的参数。在这项工作中，提出了一种给出成分、掺杂和能量相关输运参数的方法，并成功地应用于AlGaAs/GaAs HBTs的模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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