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1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献

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A new comprehensive and experimentally verified electron transport model for strained SiGe 一种新的、综合的、经实验验证的应变SiGe电子输运模型
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865272
F. M. Bufler, P. Graf, B. Meinerzhagen, H. Kibbel, G. Fischer
{"title":"A new comprehensive and experimentally verified electron transport model for strained SiGe","authors":"F. M. Bufler, P. Graf, B. Meinerzhagen, H. Kibbel, G. Fischer","doi":"10.1109/SISPAD.1996.865272","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865272","url":null,"abstract":"The favorable properties of Si/SiGe heterojunction bipolar transistors (HBTs) for applications in the GHz range and the possibility to integrate these devices together with silicon CMOS circuitry on one chip will lead to a replacement of GaAs based components by SiGe based parts for many high frequency applications in near future. Hence there is an increasing demand for an accurate modeling of carrier transport in strained SiGe. But despite this apparent importance all electron transport models for strained SiGe published so far are of limited generality (e.g. neglect nonparabolicity and the influence of Ge on phonon scattering) and are not verified experimentally by measurements of ohmic mobility in strained SiGe layers. This paper aims at closing this gap.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126226900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new semiconductor research paradigm using Internet collaboration 利用互联网合作的半导体研究新范例
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865249
P. Losleben, D. Boning
{"title":"A new semiconductor research paradigm using Internet collaboration","authors":"P. Losleben, D. Boning","doi":"10.1109/SISPAD.1996.865249","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865249","url":null,"abstract":"Continued progress in semiconductor process and device research will require new modes of collaboration and interaction. Internet technology will play a large role in creating and supporting a new distributed community of researchers. Stanford and MIT are working together to explore several elements of emerging networking technology in the context of semiconductor research. These elements include a help system, fabrication facilities database, a Collaboratory, networked process repository, remote simulation, remote process execution, remote microscope, and electronic technical publication and repositories.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133456671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Numerical simulation of drain lag in HJFETs with a p-buffer layer 带p缓冲层的hjfet漏极滞后的数值模拟
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865303
M. Nogome, K. Kunihiro, Y. Ohno
{"title":"Numerical simulation of drain lag in HJFETs with a p-buffer layer","authors":"M. Nogome, K. Kunihiro, Y. Ohno","doi":"10.1109/SISPAD.1996.865303","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865303","url":null,"abstract":"Summary form only given. We studied the shielding effect of a partially depleted p-type buffer layer against traps for heterojunction FETs (HJFET). We confirmed a trade-off between the shielding and the drain parasitic capacitance. We also found a new frequency dispersion, which occurs in early stages due to the hole distribution setup time in the p-layer.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133919307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling and simulation of spatial dependent transient diffusion after BF/sub 2/ implantation BF/ sub2 /注入后空间相关瞬态扩散的建模与仿真
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865250
A. Hofler, T. Feudel, N. Strecker, W. Fichtner, K. Suzuki, N. Sasaki, Y. Kataoka, F. Gratsch
{"title":"Modeling and simulation of spatial dependent transient diffusion after BF/sub 2/ implantation","authors":"A. Hofler, T. Feudel, N. Strecker, W. Fichtner, K. Suzuki, N. Sasaki, Y. Kataoka, F. Gratsch","doi":"10.1109/SISPAD.1996.865250","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865250","url":null,"abstract":"In this paper, we study the effect of high-dose BF/sub 2/ implantation/annealing sequences on the redistribution of dopant atoms already present in silicon crystal. Transient diffusion and activation effects are investigated using numerical simulation and experimental data obtained from silicon samples containing a buried layer of boron.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127060610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automatic adaptive meshing for efficient electrostatic boundary element simulations 高效静电边界元模拟的自动自适应网格划分
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865307
M. Bachtold, J. Korvink, H. Baltes
{"title":"Automatic adaptive meshing for efficient electrostatic boundary element simulations","authors":"M. Bachtold, J. Korvink, H. Baltes","doi":"10.1109/SISPAD.1996.865307","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865307","url":null,"abstract":"The boundary element method (BEM) is well suited for the electrostatic analysis of large, geometrically complex structures. When highly accurate solutions are required, the discretization (meshing) of the geometry becomes increasingly important. A scheme is required to construct optimal meshes, in the sense that maximum accuracy of the solution can be achieved with minimal computational effort. Automatic adaptive meshing allows to automatically generate a good mesh, by iteratively refining the elements that contribute strongly to the overall error. An error indicator for BEM simulations is presented and an adaptive meshing scheme, involving both p- and h-type refinement. The generated discretizations lead to significantly higher accuracy for a given simulation size.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130720971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fully self-consistent calculation the large-signal response of a double-barrier heterostructure device 双势垒异质结构器件大信号响应的完全自洽计算
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865305
W. Liou, Mei-Ling Yeh
{"title":"Fully self-consistent calculation the large-signal response of a double-barrier heterostructure device","authors":"W. Liou, Mei-Ling Yeh","doi":"10.1109/SISPAD.1996.865305","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865305","url":null,"abstract":"A fully self-consistent large-signal double-barrier (DB) heterostructure model is reported in this paper. Both dc and ac potentials are self-consistently solved with the Poisson and Schrodinger equations. This ensures that the model provides consistent topologies for both current and charge conservation of each harmonic. With this approach we can really count the impact of ac charge on the harmonic current calculation. Harmonic balance based simulation technique is used to calculated the frequency properties of primary harmonic as well as higher harmonics. A conventional undoped AlGaAs/GaAs/AlGaAs DB structure with thickness of 34 /spl Aring//34 /spl Aring//34 /spl Aring/ sandwiched between two lightly doped GaAs spacers is used as a test device. Generalized Wannier Picture is used to analyze this DB structure. In this paper, we also develop a new wave function matching technique to estimate the Hamiltonian elements at the interfaces of heterostructure.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"7-8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133990571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate prediction of hot-carrier effects for a deep sub-/spl mu/m CMOS technology based on inverse modeling and full band Monte Carlo device simulation 基于逆建模和全频带蒙特卡罗器件仿真的深亚/spl μ m CMOS技术热载子效应精确预测
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865273
C. Jungemann, S. Yamaguchi, H. Goto
{"title":"Accurate prediction of hot-carrier effects for a deep sub-/spl mu/m CMOS technology based on inverse modeling and full band Monte Carlo device simulation","authors":"C. Jungemann, S. Yamaguchi, H. Goto","doi":"10.1109/SISPAD.1996.865273","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865273","url":null,"abstract":"The ultimate goal of device modeling is the accurate prediction of device characteristics before the technological realisation. Due to insufficiencies of process simulation and to a lesser extent of device simulation this goal has not yet been reached. The aim of this work is to reduce the number of wafers in split lots used to investigate the effects of device parameter variation by predicting these effects with device modeling. Our approach is based on a device model (geometry and doping profile) which is extracted for one wafer by inverse modeling. This model is then used to predict the effects of parameter variation by device simulation with Galene III and our full band Monte Carlo (FB-MC) program Falcon. In this work we apply the new method to a state of the art 0.25/spl mu/m-CMOS technology and validate the approach by comparison with experiment.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122761582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A practical sputter equipment simulation system for aluminum including surface diffusion model 一个实用的铝溅射设备仿真系统，包括表面扩散模型
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865280
H. Yamada, T. Ohta, H. Kaneko, Y. Yamada
{"title":"A practical sputter equipment simulation system for aluminum including surface diffusion model","authors":"H. Yamada, T. Ohta, H. Kaneko, Y. Yamada","doi":"10.1109/SISPAD.1996.865280","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865280","url":null,"abstract":"We have developed a practical aluminum sputter deposition system which is composed of a trajectory calculation module using the Monte Carlo (MC) method, a surface diffusion calculation module, and a deposition profile module using a 'modified' QAS (quasi-axis-symmetrical) approximation. In the system, the string model is utilized as the common data structure for simplifying the interface. The simulated profiles (after adjustment of surface diffusion coefficient) agree with the experiments. The surface diffusion model is found to be indispensable for aluminum. The adjusted surface diffusion coefficient with the activation energy of 12.4 (kJ/mole) is found about one million times as large as the bulk at 573 K.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122995630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation 相位空间多重刷新:蒙特卡罗器件仿真的通用统计增强方法
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865276
C. Jungemann, S. Decker, R. Thoma, W.L. Eng, H. Goto
{"title":"Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation","authors":"C. Jungemann, S. Decker, R. Thoma, W.L. Eng, H. Goto","doi":"10.1109/SISPAD.1996.865276","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865276","url":null,"abstract":"In this abstract we describe a new Multiple Refresh (MR) technique for Monte Carlo (MC) device simulation which is an improved version of a method developed for bulk simulations. The purpose of this method is to enhance statistics of rare events (e.g. impact ionisation, oxide injection) without increasing the number of common events (i.e. low energetic particles). The MR technique allows to control directly the stochastic noise of the MC simulation in predefined regions of phase space by maintaining a given number of particles in these regions. We apply the method to an LDD-NMOSFET.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130471854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A single electron device and circuit simulator with a new algorithm to incorporate co-tunneling 采用新算法的单电子器件和电路模拟器
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865311
C. Wasshuber, H. Kosina
{"title":"A single electron device and circuit simulator with a new algorithm to incorporate co-tunneling","authors":"C. Wasshuber, H. Kosina","doi":"10.1109/SISPAD.1996.865311","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865311","url":null,"abstract":"Introduces a single electron device and circuit simulator for the investigation of devices and circuits consisting of tunnel junctions, capacitors, constant voltage sources, piecewise linear voltage sources and voltage controlled voltage sources. The simulator features a new algorithm to incorporate the quantum mechanical effect of co-tunneling. The basic simulation method is to calculate tunnel rates for all possible tunnel events starting from a particular state (charge distribution) of the circuit. These tunnel rates strongly depend on the change in free energy, of the whole circuit. Every system tends to a state of lower energy and therefore tunnel events that lower the free energy are more likely to happen.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130819618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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