Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-01 DOI:10.1109/SISPAD.1996.865306

T. Yamada, K. Horio

引用次数: 0

Abstract

We have clarified the role of deep-acceptor-like surface states in slow current transients in GaAs MESFET's. To reduce them, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface state density.

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GaAs mesfet中慢电流瞬态表面态效应的二维模拟

我们已经阐明了深受体表面态在GaAs MESFET的慢电流瞬态中的作用。为了减少它们，深层受体应该像电子陷阱一样。这可以通过降低表面态密度来实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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