A new approach to mesh generation for complex 3D semiconductor device structures

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865322

K. Tanaka, A. Notsu, H. Matsumoto

引用次数: 2

Abstract

A new approach to mesh generation for general 3D domain is proposed. A prototype mesh generator which utilizes octree for easy manipulation of 3D structures, is developed. It shows that "well-fitted" tetrahedral mesh can be constructed assuming that an appropriate triangular mesh upon the boundary is given. There is a good chance that adaptive meshing and moving boundary will be managed well in this mesh generation method.

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复杂三维半导体器件结构网格生成的新方法

提出了一种通用三维区域网格生成的新方法。开发了一种基于八叉树的三维网格生成器原型。结果表明，只要在边界上给定合适的三角形网格，就可以构造出“良好拟合”的四面体网格。这种网格生成方法可以很好地处理自适应网格划分和移动边界。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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