GaAs mesfet中慢电流瞬态表面态效应的二维模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-01 DOI:10.1109/SISPAD.1996.865306

T. Yamada, K. Horio

{"title":"GaAs mesfet中慢电流瞬态表面态效应的二维模拟","authors":"T. Yamada, K. Horio","doi":"10.1109/SISPAD.1996.865306","DOIUrl":null,"url":null,"abstract":"We have clarified the role of deep-acceptor-like surface states in slow current transients in GaAs MESFET's. To reduce them, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface state density.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs\",\"authors\":\"T. Yamada, K. Horio\",\"doi\":\"10.1109/SISPAD.1996.865306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have clarified the role of deep-acceptor-like surface states in slow current transients in GaAs MESFET's. To reduce them, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface state density.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们已经阐明了深受体表面态在GaAs MESFET的慢电流瞬态中的作用。为了减少它们，深层受体应该像电子陷阱一样。这可以通过降低表面态密度来实现。

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Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs

We have clarified the role of deep-acceptor-like surface states in slow current transients in GaAs MESFET's. To reduce them, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface state density.

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1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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