反演通道中电子的局部和有效横向场依赖迁移率的基本关系

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1900-01-01 DOI:10.1109/SISPAD.1996.865295

S. Biesemans, K. De Meyer

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引用次数: 2

摘要

本文描述了一种新的建模方法，将局部迁移率与实验确定的宏观或有效迁移率作为垂直电场的函数联系起来。利用积分表示技术，可以找到任何局部迁移模型必须满足与实验一致的数学条件。在二维器件模拟器中使用的局部迁移率模型必须满足这一要求，以实现实验数据和仿真数据之间的定量一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels

This paper describes a new modeling approach that relates the local mobility to the experimentally determined macroscopic or effective mobility as a function of the vertical electric field. Using the technique of integral representations it is possible to find a mathematical condition which any local mobility model has to fulfil to be in accordance with experiment. A local mobility model used in a 2D device simulator has to meet this requirement in order to achieve quantitative agreement between experimental and simulated data.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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