p沟道mosfet SiO/sub - 2/-Si界面磷堆积模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865258

M. Akazawa, T. Aoki, S. Tazawa, Y. Sato

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引用次数: 1

摘要

在模拟大规模集成电路器件的性能时，掺杂剂的分布是非常重要的。因此，当掺杂剂偏析发生到影响这种分布的程度时，应考虑到这一点。本文提出了p沟道mosfet应考虑“磷堆积现象”，并提出了仿真模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Phosphorus pile-up model for SiO/sub 2/-Si interface of p-channel MOSFETs

Dopant distribution is very important when simulating the performance of LSI devices. Therefore dopant segregation should be taken into account when it occurs to the extent that it affects this distribution. This paper suggests that for p-channel MOSFETs the "phosphorus pile-up phenomenon" should be taken into account and proposes a simulation model.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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